The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Sep. 09, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Paul Michael Solomon, Westchester, NY (US);

Takashi Ando, Eastchester, NY (US);

Eduard Albert Cartier, New York, NY (US);

John Rozen, Hastings on Hudson, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/24 (2023.02); H10B 63/80 (2023.02); H10N 70/026 (2023.02); H10N 70/028 (2023.02); H10N 70/063 (2023.02);
Abstract

A grain-boundary self-aligned resistive memory structure is provided enabling the closely-packed formation of multiple, oxide-based, ReRAM elements in parallel, each with its own compliance resistor. The structure is capable of forming multiple filaments, one per element, with the aim of reducing the variability in the composite ReRAM cell.


Find Patent Forward Citations

Solomon, Paul. (2026). Multifilament resistive memory with insulation layers (U.S. Patent No. 12568776). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12568776

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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