The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Aug. 10, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Kazuhiro Tomioka, Yokohama Kanagawa, JP;

Kazuya Sawada, Seoul, KR;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

According to one embodiment, a memory device includes a memory element provided above a substrate in a first direction perpendicular to a first surface of the substrate; a switching element provided between the substrate and the memory element; and a first layer provided between the memory element and the switching element. The first layer includes at least one selected from the group including boron, carbon, silicon, magnesium, aluminum, scandium, titanium, vanadium, gallium, germanium, yttrium, zirconium, niobium, molybdenum, palladium, silver, hafnium, tantalum, tungsten, iridium, and platinum. The first layer includes an air gap.


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