The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Oct. 11, 2024
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Francis J. Kub, Arnold, MD (US);
Andrew D. Koehler, Alexandria, VA (US);
Travis J. Anderson, Alexandria, VA (US);
Karl D. Hobart, Alexandria, VA (US);
Marko J. Tadjer, Vienna, VA (US);
Abstract
A wafer-scale method of making gallium nitride (GaN) device die is provided. In embodiments, the method includes: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; and removing the at least one etchable intermediate layer to expose a second side of the GaN material layer. In implementations, the resulting exposed second side of the GaN material layer has a surface roughness of less than 1 nanometers (nm) Root Mean Square (RMS).