The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jul. 14, 2023
Longi Green Energy Technology Co., Ltd., Xi'an, CN;
Dongwei Zhang, Xi'an, CN;
Shuai Wu, Xi'an, CN;
Yunpeng Li, Xi'an, CN;
Feng Ye, Xi'an, CN;
Liang Fang, Xi'an, CN;
Xixiang Xu, Xi'an, CN;
LONGi Green Energy Technology Co., Ltd., Xi'an, CN;
Abstract
The present application discloses a back-contact solar cell and a preparation method thereof. The back-contact solar cell includes: a semiconductor substrate; a tunnel oxide layer and a doped crystalline silicon layer, where the tunnel oxide layer is located in a first region, and the doped crystalline silicon layer is located on a surface of the tunnel oxide layer away from the semiconductor substrate; an intrinsic non-crystalline silicon layer and a doped non-crystalline silicon layer where the intrinsic non-crystalline silicon layer is located in a second region and extends on part of a surface of the doped crystalline silicon layer away from the tunnel oxide layer, and the doped non-crystalline silicon layer is located on a surface of the intrinsic non-crystalline silicon layer away from the semiconductor substrate; and an isolating structure including an isolating layer and an isolating groove.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile