Silicon carbide detector and fabrication method thereof

Abstract

Provided are a silicon carbide detector and a fabrication method thereof. The silicon carbide detector includes: a silicon carbide substrate layer; and a silicon carbide base layer located on a side of the silicon carbide substrate layer, where the silicon carbide base layer includes a first silicon carbide layer, a second silicon carbide layer and a third silicon carbide layer that are stacked; the third silicon carbide layer serves as an anode layer and is located in a first region of the second silicon carbide layer, and a second region of the second silicon carbide layer is exposed; N drift rings are provided in the second region of the second silicon carbide layer, and among the N drift rings, a 1st drift ring is a closed ring and remaining drift rings are arranged in a spiral pattern around the 1st drift ring.