The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Apr. 24, 2023
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Abstract
The invention provides a method for manufacturing a semiconductor structure, which comprises the following steps: a high voltage metal oxide semiconductor (HVMOS) is provided, the high voltage metal oxide semiconductor comprises a substrate, and the substrate comprises an NMOS region and a PMOS region, the NMOS region and the PMOS region each comprise an oxide layer, a P-type ion doping step on the PMOS region is performed, the thickness of the oxide layer of the PMOS region is reduced during the P-type ion doping step, and an N-type ion doping step is then performed on the NMOS region after the P-type ion doping step, the thickness of the oxide layer of the NMOS region is reduced during the N-type ion doping step.