The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jan. 20, 2023
Infineon Technologies Austria Ag, Villach, AT;
Lars Müller-Meskamp, Dresden, DE;
Ralf Rudolf, Dresden, DE;
Annett Winzer, Dresden, DE;
Christian Schippel, Dresden, DE;
Thomas Künzig, Baldham, DE;
Dirk Priefert, Moers, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes a semiconductor layer, an electronic element and laterally separated trench isolation structures. The semiconductor layer includes an element region having an inner region, an outer region on opposite sides of the inner region, and a transition region that laterally separates the inner region and the outer region. The electronic element includes a first doped region formed in the inner region and a second doped region formed in the outer region. The trench isolation structures are formed at least in the transition region. Each trench isolation structure extends from a first surface of the semiconductor layer into the semiconductor layer.