The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Mar. 01, 2023
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Kenji Harada, Tokyo, JP;
Shinya Soneda, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 8/00 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 8/00 (2025.01); H10D 64/513 (2025.01);
Abstract
A semiconductor device has an alternating region in which insulated gate bipolar transistor (IGBT) regions and diode regions are alternately arranged linearly in a plan view. In the alternating region, a width, in the first direction, of an IGBT region closest to the center of a cell region is equal to or smaller than widths of other IGBT regions in the first direction, and a width, in the first direction, of a diode region closest to a center of the cell region is equal to or smaller than widths of other diode regions in the first direction.