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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12568636 B1

PDFFull Text
Date of Patent:
Mar. 03, 2026

Filed:

Dec. 09, 2022

Mps diode device and preparation method therefor

Applicant:

Gree Electric Appliances, Inc. of Zhuhai, Zhuhai, CN;

Inventors:

Yiren Lin, Zhuhai, CN;

Daokun Chen, Zhuhai, CN;

Dan Zeng, Zhuhai, CN;

Bo Shi, Zhuhai, CN;

Assignee:

GREE ELECTRIC APPLIANCES, INC. OF ZHUHAI, Zhuhai, CN;

Attorney:

Westbridge IP LLC

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Paul A Berry

Int. Cl.
CPC ...
H10D 8/60 (2025.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H10D 8/01 (2025.01); H10D 62/81 (2025.01); H10D 62/832 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 8/60 (2025.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01); H01L 21/02601 (2013.01); H01L 21/02631 (2013.01); H01L 21/046 (2013.01); H01L 21/0485 (2013.01); H10D 8/051 (2025.01); H10D 62/814 (2025.01); H10D 62/8325 (2025.01); H10D 64/62 (2025.01);
Abstract

Disclosed are an MPS diode device and a preparation method therefor. The MPS diode device comprises a plurality of cells arranged in parallel, wherein each cell comprises a cathode electrode, and a substrate, epitaxial layer, buffer layer, and anode electrode that are formed in succession on the cathode electrode; two active regions are formed on the side of the epitaxial layer away from the substrate; the width of forbidden band of the buffer layer is greater than the width of forbidden band of the epitaxial layer, and a material of the buffer layer and a material of the epitaxial layer are allotropes; and first openings are formed at the positions in the buffer layer opposite to the active regions, and an ohmic metal layer is formed in the first openings.

Find Patent Forward Citations

Lin, Yiren. (2026). Mps diode device and preparation method therefor (U.S. Patent No. 12568636). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12568636

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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