The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Apr. 14, 2023
SK Hynix Inc., Gyeonggi-do, KR;
Jung Wook Woo, Gyeonggi-do, KR;
Sei Yon Kim, Gyeonggi-do, KR;
Min Chul Sung, Gyeonggi-do, KR;
Yeon Gyu Lee, Gyeonggi-do, KR;
Do Hee Kim, Gyeonggi-do, KR;
Ja Yong Kim, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes: forming a first oxide layer containing a first element over a first electrode layer; forming a second oxide layer containing a second element over the first oxide layer; forming a stacked structure in which a plurality of first oxide layers and a plurality of second oxide layers are alternately stacked by repeating the forming of the first oxide layer and the forming of the second oxide layer a plurality of times; and forming a second electrode layer over the stacked structure, wherein a thickness of a lowermost first oxide layer among the plurality of first oxide layers is greater than a thickness of each of other first oxide layers.