High-density three-dimensional multilayer memory and fabrication method

Abstract

The present disclosure provides a high-density three-dimensional multilayer memory and a preparation method. The preparation method of the memory comprises the following steps: firstly forming a basic structure body; secondly, slotting the basic structure body; thirdly, forming a preset number of memory cell holes in the a segmentation groove, an insulating medium being arranged between every two adjacent memory cell holes, a vertical electrode being arranged in the memory cell hole, and a memory medium layer being arranged between the vertical electrode and an interdigital structure; and in the third step, before the memory medium is arranged, the preparation method comprises the following steps: performing doping diffusion on the first conducting medium located on the inner wall of the segmentation groove, so that the first conducting medium close to the inner wall of the segmentation groove forms a buffer area made of a low-doped semiconductor material.