The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Nov. 22, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jungmin Park, Seoul, KR;

Hanjin Lim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H10B 12/00 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10B 12/30 (2023.02); H10D 1/684 (2025.01);
Abstract

A semiconductor device includes a transistor disposed on a substrate; and a capacitor structure electrically connected to the transistor, wherein the capacitor structure includes a first electrode; a dielectric layer structure disposed on the first electrode; and a second electrode disposed on the dielectric layer structure, the dielectric layer structure includes an interfacial layer disposed on the first electrode; a first dielectric layer disposed on the interfacial layer and including any one of a ferroelectric material, an antiferroelectric material, and a combination of a ferroelectric material and an antiferroelectric material; an insertion layer disposed on the first dielectric layer; and a second dielectric layer disposed on the insertion layer and including a paraelectric material.


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