The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Dec. 23, 2022
Applicant:

Hanchett Entry Systems, Inc., Phoenix, AZ (US);

Inventor:

Randall Shaffer, Phoenix, AZ (US);

Assignee:

Hanchett Entry Systems, Inc., Phoenix, AZ (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01F 41/02 (2006.01); H01F 7/06 (2006.01); H01F 7/18 (2006.01); H05K 1/02 (2006.01); H05K 1/18 (2006.01); H05K 7/14 (2006.01);
U.S. Cl.
CPC ...
H01F 7/064 (2013.01); H01F 7/1838 (2013.01); H01F 41/02 (2013.01); H05K 1/18 (2013.01); H05K 7/1427 (2013.01); H05K 2201/09018 (2013.01);
Abstract

A constant-current control circuit comprising a switching circuit including a source voltage, and primary and secondary switches is provided. The primary GaNFET switch is connected with a solenoid assembly coil. The secondary switch is connected with the coil which has an inductance. From tto t, the primary GaNFET switch is closed and the secondary switch is open, the source voltage is applied across the coil, and a counter EMF decays until the voltage across the coil equals the source voltage at t, thereby allowing current to flow through the coil. From tto T, the primary GaNFET switch is open and the secondary switch is closed, and a positive EMF equal to the source voltage is applied across the coil until the positive EMF decays to zero at T, such that the current continues to flow through the coil without the source voltage being applied across the coil.


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