The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Sep. 15, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Philkyu Kang, Suwon-si, KR;
Chihyun Kim, Suwon-si, KR;
Junehong Park, Suwon-si, KR;
Jayang Yoon, Suwon-si, KR;
Chiweon Yoon, Suwon-si, KR;
Dojeon Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a method of operating a nonvolatile memory device including a voltage generator, the method including calculating a difference between a voltage level of a first word line node and a voltage level of a second word line node, changing a first reference voltage level of the voltage generator to a second reference voltage level based on the difference between the voltage levels, and determining a target voltage level based on any one of the first reference voltage level and the second reference voltage level. The first word line node may be closer from an output terminal of the voltage generator than the second word line node.