The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Aug. 17, 2023
Applicant:

Gigadevice Semiconductor Inc., Beijing, CN;

Inventors:

Meifeng Wang, Beijing, CN;

Miaomiao Wu, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 11/4074 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01); G11C 11/4096 (2013.01);
Abstract

Pre-charge voltage generation circuit for a random memory and a random memory are provided. The pre-charge voltage generation circuit is configured to selectively provide a pre-charge voltage and includes: a voltage generation module, configured to generate a first voltage and a second voltage, wherein either of the first voltage and the second voltage serves as the pre-charge voltage, the first voltage is greater than the second voltage; a selection module, coupled to the voltage generation module, configured to select and output the second voltage as the common end voltage of the storage capacitor of the random memory in response to an operation command being a write command, and configured to select and output the first voltage as the common end voltage in response to the operation command being a read command.


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