The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jun. 28, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sangyun Kim, Suwon-si, KR;
Younghun Seo, Suwon-si, KR;
Kyuchang Kang, Suwon-si, KR;
Incheol Nam, Suwon-si, KR;
Jaejoon Song, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of operating a semiconductor memory device includes: providing NBTI information including row addresses of NBTI vulnerable cells among the plurality of memory cells such that a decrease in a threshold voltage of the cell transistor due to application of the normal turn-off voltage about the NBTI vulnerable cells is greater than a reference decrease value; providing PBTI information including row addresses of PBTI vulnerable cells among the plurality of memory cells such that an increase in the threshold voltage of the cell transistor due to application of the normal turn-on voltage about the PBTI vulnerable cells is greater than a reference increase value; increase the threshold voltage of the NBTI vulnerable cells by performing an NBTI compensation operation based on the NBTI information; and decrease the threshold voltage of the PBTI vulnerable cells by performing a PBTI compensation operation based on the PBTI information.