The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jan. 17, 2024
City University of Hong Kong, Hong Kong, CN;
Cheng Wang, Hong Kong, CN;
Sha Zhu, Hong Kong, CN;
Yue Bun Edwin Pun, Hong Kong, CN;
Yiwen Zhang, Hong Kong, CN;
City University of Hong Kong, Hong Kong, CN;
Abstract
A centimeter-resolution integrated photonic millimeter-wave (mmWave) radar chip operating in the mmWave V band based on a 4-inch wafer-scale thin-film lithium niobate (TFLN) technology is provided. The fabricated TFLN photonic mmWave integrated circuit has a first electro-optic modulator (EOM) capable of generating a broadband linear frequency modulated mmWave radar waveform through optical frequency multiplication of a low-frequency input signal, and a second EOM for frequency de-chirp of the reflected echo wave, thereby greatly relieving bandwidth requirements for the digital-to-analog converter in the transmitter and analog-to-digital converter in the receiver. In the absence of optical and electrical filters, the radar chip features continuous on-demand tunability of the center frequency and bandwidth, currently only limited by the bandwidths of electrical amplifiers. The radar chip provides a promising way to achieve high resolution sensing and detection for vehicle radar, airborne radar, and smart home in the 6G era.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile