The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Oct. 01, 2022
Applicant:

Spts Technologies Limited, Newport, GB;

Inventors:

Scott Haymore, Newport, GB;

Tony Wilby, Newport, GB;

Stephen Burgess, Newport, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/02 (2006.01); C23C 14/35 (2006.01); C23C 14/56 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/566 (2013.01); C23C 14/021 (2013.01); C23C 14/35 (2013.01); H01J 37/3405 (2013.01); H01J 37/3447 (2013.01); H01J 2237/3322 (2013.01); H01J 2237/3343 (2013.01); H01J 2237/335 (2013.01);
Abstract

A PVD apparatus can be operated in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate. The semiconductor substrate with the electrically conductive feature formed thereon is positioned on a substrate support in a chamber of the PVD apparatus. A shutter is deployed within the chamber to divide the chamber into a first compartment in which the semiconductor substrate and the substrate support are positioned, and a second compartment in which a target of the PVD apparatus is positioned. A first plasma is generated in the first compartment to remove material from the electrically conductive feature and a second plasma is simultaneously generated in the second compartment to clean the target.


Find Patent Forward Citations

Loading…