The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Mar. 01, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Yumie Kitajima, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); G01R 31/26 (2020.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 25/18 (2023.01); H02M 7/537 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); G01R 31/2642 (2013.01); H01L 25/18 (2013.01); H01L 23/538 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/4801 (2013.01); H01L 2224/48137 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/2076 (2013.01); H02M 7/537 (2013.01);
Abstract
Provided is a technique for enhancing the accuracy of deterioration diagnosis in a semiconductor device. The semiconductor device relating to the technique disclosed in the present specification is provided with a case, a semiconductor chip inside the case, a metal wire bonded to an upper surface of the semiconductor chip, at least one test piece inside the case, and a pair of terminals provided outside the case and connected to the test piece. The test piece is separated from the metal wire inside the case.