The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Nov. 19, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/50 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 21/76883 (2013.01); H10B 41/50 (2023.02); H10B 43/50 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02);
Abstract
The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers that are alternately stacked, a channel plug at least partially passing through the stack structure on a cell region, and a plurality of support structures at least partially passing through the stack structure on a contact region.
Bang, Byeong. (2026). Semiconductor device and method of manufacturing the semiconductor device (U.S. Patent No. 12564053). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12564053
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile