The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Aug. 01, 2023
Non-volatile memory device, method for fabricating the same and electronic system including the same
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/5226 (2013.01); H01L 25/0652 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 80/00 (2023.02); H01L 2225/06506 (2013.01);
Abstract
Non-volatile memory devices, methods for fabricating the same, and/or electronic systems including the same may be provided. A non-volatile memory device may include a substrate, a gate electrode layer, an electrode pad, a channel structure, a vertical through contact, and a separation insulation pattern.