The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Aug. 29, 2023
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;

Inventors:

Xinghua Wang, Guangdong, CN;

Qiankun Xu, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H10D 30/67 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5225 (2013.01); H01L 23/5226 (2013.01); H10D 30/6723 (2025.01); H10D 99/00 (2025.01); H10D 30/6755 (2025.01);
Abstract

A thin film transistor array substrate includes a base substrate, a light shielding layer, a semiconductor layer, a gate insulating layer, a gate layer, and a source-drain metal layer in contact with the semiconductor layer and in contact with the light shielding layer sequentially disposed on the base substrate, a first insulating layer covering the source-drain metal layer disposed on the base substrate, and a metal protection layer disposed on the first insulating layer. The semiconductor layer, the gate layer, and the source-drain metal layer form a thin film transistor. An end of the metal protection layer is in contact with the source-drain metal layer, and another end of the metal protection layer is in contact with the light shielding layer.


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