The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Aug. 31, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventor:
Satoshi Mitsugi, Kawasaki Kanagawa, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 1/42 (2012.01); G03F 7/00 (2006.01); H01L 21/311 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/09 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0271 (2013.01); G03F 1/42 (2013.01); G03F 7/0002 (2013.01); H01L 21/31144 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/094 (2013.01);
Abstract
According to one embodiment, a pattern forming method includes forming a first resin pattern on a substrate with a first resin. The first resin pattern includes a first transfer pattern and a first mark. A second resin is dispensed to cover the first mark of the first resin pattern. A first pattern is formed including the first transfer pattern and the second resin covering the first mark. The first pattern is then transferred to a first process film on the substrate.
Mitsugi, Satoshi. (2026). Pattern forming method, semiconductor device manufacturing method, and pattern forming apparatus (U.S. Patent No. 12564020). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12564020
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile