The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Feb. 03, 2023
Thinsic Inc, Santa Clara, CA (US);
Tirunelveli Subramaniam Ravi, San Jose, CA (US);
Ashraf Ahmed Eldakrouri, Santa Clara, CA (US);
ThinSiC Inc., Santa Clara, CA (US);
Abstract
A susceptor configured to hold one or more WBG (Wide Bandgap) semiconductor wafers for epitaxial layer growth to support a manufacture of at least one WBG semiconductor device. A susceptor is removed from an epitaxial reactor when a predetermined thickness of polycrystalline WBG semiconductor material builds up from growing epitaxial layers on one or more WBG semiconductor wafers. The susceptor is scanned by a laser such that the energy from the laser is absorbed by the one or more layers of polycrystalline WBG semiconductor material to decompose the one or more layers of polycrystalline WBG semiconductor material into two or more constituent components. The two or more constituent components are then removed from the susceptor by etching to produce a cleaned susceptor. The cleaned susceptor can then be placed in an epitaxial reactor to grow epitaxial wafers on WBG semiconductor wafers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile