The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Jun. 01, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Su Jeong Kim, Yongin-si, KR;

Jin Wan Kim, Yongin-si, KR;

Seung Geun Lee, Yongin-si, KR;

Sang Jo Kim, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8312 (2025.01); H10H 20/0137 (2025.01); H10H 20/825 (2025.01); H10H 20/857 (2025.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01);
Abstract

A display device includes a first electrode and a second electrode that are disposed on a substrate, a light emitting element disposed on the first electrode and the second electrode, a first contact electrode electrically connecting the first electrode and the light emitting element to each other, and a second contact electrode electrically connecting the second electrode and the light emitting element to each other. The light emitting element includes a first semiconductor layer including a semiconductor of a first type, a second semiconductor layer including a semiconductor of a second type, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a doped semiconductor layer including a porous structure.


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