The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Apr. 26, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junsik Hwang, Hwaseong-si, KR;

Kyungwook Hwang, Seoul, KR;

Seogwoo Hong, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01); H10H 20/851 (2025.01); H10H 20/857 (2025.01); H10H 29/14 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8312 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01); H10H 20/8514 (2025.01); H10H 20/857 (2025.01); H10H 29/142 (2025.01);
Abstract

A micro light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer arranged on an upper surface of the first semiconductor layer, a second semiconductor layer arranged on an upper surface of the light emitting layer and doped with a second conductivity type electrically opposite to the first conductivity type, an insulating layer arranged on an upper surface of the second semiconductor layer, a first electrode arranged on an upper surface of the insulating layer and electrically connected to the first semiconductor layer, a second electrode arranged on the upper surface of the insulating layer and electrically connected to the second semiconductor layer, and an aluminum nitride layer arranged on a lower surface of the first semiconductor layer and having a flat surface.


Find Patent Forward Citations

Loading…