The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Oct. 19, 2022
Quanzhou Sanan Semiconductor Technology Co., Ltd., Nanan City, CN;
Linhua Cao, Xiamen, CN;
Wanjun Chen, Xiamen, CN;
Huining Wang, Xiamen, CN;
Heying Tang, Xiamen, CN;
Chunlan He, Xiamen, CN;
Lili Jiang, Xiamen, CN;
Liming Zhang, Xiamen, CN;
Renlong Yang, Xiamen, CN;
Chung-Ying Chang, Xiamen, CN;
QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD., Nanan City, CN;
Abstract
A light emitting diode device includes an epitaxial layered structure and first and second electrodes that are disposed on the epitaxial layered structure. The second electrode includes a body portion and at least one extending portion connected to the body portion and extending in a direction away from the body portion. The extending portion includes at least one curved section. A projection of the curved section on the epitaxial layered structure includes first and second curved sides that are opposite to each other and that are curved in an identical direction. The first curved side has a first imaginary center of curvature, and the second curved side has a second imaginary center of curvature. A distance between the first imaginary center of curvature and the second imaginary center of curvature is equal to or smaller than 5 μm.