The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Aug. 04, 2021
Applicant:

Poro Technologies Ltd, Cambridge, GB;

Inventors:

Tongtong Zhu, Cambridge, GB;

Yingjun Liu, Cambridge, GB;

Muhammad Ali, Cambridge, GB;

Assignee:

PORO TECHNOLOGIES LTD, Cambridge, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/818 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 29/14 (2025.01);
U.S. Cl.
CPC ...
H10H 20/818 (2025.01); H10H 20/0137 (2025.01); H10H 20/825 (2025.01); H10H 29/142 (2025.01);
Abstract

A light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and the p-doped portion. The light emitting region comprises: a light-emitting layer which emits light at a peak wavelength between 400 and 599 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting layer; and a III-nitride barrier layer located on the III-nitride layer. The light emitting diode comprises a porous region of III-nitride material. An LED array and a method of manufacturing an LED with a peak emission wavelength between 400 nm and 599 nm under electrical bias are also provided.


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