The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Sep. 25, 2023
Applicant:
First Solar, Inc., Tempe, AZ (US);
Inventors:
Dan Damjanovic, Boise, ID (US);
Feng Liao, Perrysburg, OH (US);
Rick Powell, Ann Arbor, MI (US);
Rui Shao, Sylvania, OH (US);
Jigish Trivedi, Pleasanton, CA (US);
Zhibo Zhao, Novi, MI (US);
Assignee:
First Solar, Inc., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/123 (2025.01); H10F 10/162 (2025.01); H10F 71/00 (2025.01);
U.S. Cl.
CPC ...
H10F 77/1237 (2025.01); H10F 10/162 (2025.01); H10F 71/1253 (2025.01); H10F 71/128 (2025.01); Y02E 10/543 (2013.01); Y02P 70/50 (2015.11);
Abstract
A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.
Damjanovic, Dan. (2026). Photovoltaic device including a p-n junction and method of manufacturing (U.S. Patent No. 12563857). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12563857
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile