The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Aug. 02, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Shin Cheol Min, Seoul, KR;
Keon Yong Cheon, Yongin-si, KR;
Myung Dong Ko, Hwaseong-si, KR;
Yong Hee Park, Hwaseong-si, KR;
Sang Hyeon Lee, Gwangju-si, KR;
Dong Won Kim, Seongnam-si, KR;
Woo Seung Shin, Siheung-si, KR;
Hyung Suk Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern, a gate structure on the lower pattern and having a gate electrode and a gate insulating film that surround each of the sheet patterns, a gate capping pattern on the gate structure, a gate etching stop pattern between the gate capping pattern and the gate structure, a gate spacer along a sidewall of the gate capping pattern, a source/drain pattern on the gate structure, a gate contact through the gate capping pattern and connected to the gate electrode, upper surfaces of the gate contact and gate spacer being coplanar, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern.