The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
May. 10, 2021
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;
Yuanpeng Chen, Shenzhen, CN;
Yuanjun Hsu, Shenzhen, CN;
Abstract
The present application provides a thin film transistor and a manufacturing method thereof. A substrate, an active layer, a first insulating layer, and a gate electrode are stacked and disposed in sequence, the second insulating layer is disposed on the substrate and covers the active layer, the first insulating layer, and the gate electrode. A source electrode and a drain electrode are separately disposed on a side of the second insulating layer away from the gate electrode, and any one of a projection of the source electrode on the active layer or a projection of the drain electrode on the active layer does not coincide with a projection of the gate electrode on the active layer. Thereby, a parasitic capacitance of the gate electrode and the source electrode can be reduced, and a parasitic capacitance of the gate electrode and the drain electrode can be reduced.