The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Feb. 06, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kiyeon Yang, Suwon-si, KR;
Bonwon Koo, Suwon-si, KR;
Hajun Sung, Suwon-si, KR;
Changseung Lee, Suwon-si, KR;
Minwoo Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed are a memory device and a memory apparatus including the memory device. The memory device may include a first electrode, a second electrode spaced apart from the first electrode, an intermediate layer between the first electrode and the second electrode, and an interface layer in contact with the intermediate layer. The intermediate layer and the interface layer each may have ovonic threshold switching (OTS) characteristics. A material of the interface layer may have a threshold voltage shift greater than a threshold voltage shift (ΔVth) of the intermediate layer.