The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Aug. 11, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yongjae Lee, Suwon-si, KR;

Seung Pil Ko, Suwon-si, KR;

Kilho Lee, Suwon-si, KR;

Jeongjin Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H01L 23/00 (2006.01); H10B 80/00 (2023.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H01L 24/08 (2013.01); H10B 80/00 (2023.02); H10F 39/809 (2025.01); H01L 2224/08145 (2013.01);
Abstract

A semiconductor device includes cell lower conductive lines and peripheral lower conductive lines on a substrate, lower electrode contacts on the cell lower conductive lines, peripheral conductive contacts on the peripheral lower conductive lines, variable resistance patterns horizontally spaced apart from each other on the lower electrode contacts. The lower electrode contacts are respectively connected to the variable resistance patterns. Peripheral conductive lines are horizontally spaced apart from the variable resistance patterns on the peripheral conductive contacts. The peripheral conductive contacts are connected to the peripheral conductive lines. The cell and peripheral lower conductive lines are connected to the lower electrode contacts and the peripheral conductive contacts, respectively. The cell and peripheral lower conductive lines are at the same height. A pitch of the cell lower conductive lines directly adjacent to each other is greater than a pitch of the peripheral lower conductive lines directly adjacent to each other.


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