The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Sep. 20, 2022
Fraunhofer-gesellschaft Zur Förderung Der Angewandten Forschung E.v., Munich, DE;
Christoph Kutter, Munich, DE;
Abstract
The present invention relates to a specific method step (channel hole etching) in the production of a three-dimensionally integrated semiconductor memory. According to the invention, this method step is characterized in that the vertical channel structure to be generated thereby, the so-called channel hole, is generated by applying an anodic etching method. Thereby, layer stacks having significantly more individual layers than in conventional technology can be processed. Accordingly, the number of individual layers within a layer stack to be processed can be increased, whereby the memory capacity of the layer stack can also be increased significantly.