The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Aug. 04, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yangdoo Kim, Suwon-si, KR;
Sangwuk Park, Suwon-si, KR;
Minkyu Suh, Suwon-si, KR;
Geonyeop Lee, Suwon-si, KR;
Dokeun Lee, Suwon-si, KR;
Jungpyo Hong, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An integrated circuit device includes a substrate having a plurality of active regions defined therein, a first word line structure including a first word line, a first gate dielectric film surrounding the first word line, and an oxide semiconductor channel layer surrounding the first gate dielectric film, the first word line structure being buried in the substrate, and crossing a first active region of the plurality of active regions, a second word line structure including a second word line and a second gate dielectric film surrounding the second word line, the second word line structure being buried in the substrate and separated from the first word line structure, and crossing the first active region, a direct contact partially passing through the first active region and the first word line structure and contacting the oxide semiconductor channel layer, and a bit line contacting the direct contact.