The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Jan. 07, 2021
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A semiconductor device with a high on-state current is provided. An oxide film; a source electrode and a drain electrode over the oxide film; an interlayer insulating film covers the oxide film, the source electrode, and the drain electrode; a gate insulating film over the oxide film; a barrier insulating film over the oxide film; and a gate electrode over the gate insulating film are included. The barrier insulating film is between the source electrode and the gate insulating film and between the drain electrode and the gate electrode. An opening is formed in the interlayer insulating film so as to overlap with a region between the source electrode and the drain electrode. The barrier insulating film, the gate insulating film, and the gate electrode are in the opening. Above the barrier insulating film, the gate insulating film is in contact with the interlayer insulating film.