The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Jun. 29, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jeong Yeol Bae, Suwon-si, KR;
Jong Soo Lee, Suwon-si, KR;
Duk Soo Kim, Suwon-si, KR;
Eui Bong Yang, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a first Low Noise Amplifier (LNA), a second LNA, first and second receiving circuits, an a radio frequency multiplexer. The first LNA is connected to a first receiving port, and the second LNA is connected to a second receiving port different from the first receiving port. The first receiving circuit includes a first transformer and processes one or more outputs of the first and second LNAs. The second receiving circuit processes one or more of the outputs of the first and second LNAs. The radio frequency multiplexer controls connection between the first and second LNAs and the first and second receiving circuits. The first receiving circuit includes a first variable capacitor having a first end connected to an output of the radio frequency multiplexer and a second end connected to the first transformer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile