The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Sep. 28, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Stephen W. Bedell, Wappingers Falls, NY (US);

Jason S. Orcutt, Katonah, NY (US);

Abram L Falk, Port Cheste, NY (US);

Chi Xiong, Yorktown Heights, NY (US);

Cihan Kurter, White Plains, NY (US);

Ashutosh Rao, White Plains, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/13 (2006.01); G02B 6/132 (2006.01); G02B 6/136 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 6/132 (2013.01);
Abstract

Devices and/or methods of fabrication facilitating suppression of embedded SiGe optical waveguides with low defectivity are provided. In an embodiment, a device can comprise a substrate comprising a trench within the substrate, wherein the trench comprises a base surface and sidewalls comprising the substrate; and a fully strained silicon-germanium (SiGe) structure located within the trench, wherein a bottom surface of the SiGe structure is in contact with the base surface, wherein side surfaces of the SiGe structure are in contact with the sidewalls, and wherein the SiGe structure is at least twice the critical thickness.


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