The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Aug. 15, 2022
Fujitsu Optical Components Limited, Kawasaki, JP;
Takasi Simoyama, Zama, JP;
FUJITSU OPTICAL COMPONENTS LIMITED, Kawasaki, JP;
Abstract
A photodetector has a substrate, a light input layer formed as a first semiconductor over the substrate, the first semiconductor being transparent to a wavelength being used, and a light absorption layer formed as a second semiconductor on the light input layer, the second semiconductor having a bandgap smaller than that of the first semiconductor. The light absorption layer has a first region doped with a first conductivity-type impurity, a second region doped with a second conductive-type impurity different from the first conductive-type impurity, and an undoped region between the first region and the second region. The first region, the undoped region and the second region are arranged in a direction parallel to the substrate. The light absorption layer has a region having an effective refractive index higher than the rest of the light absorption layer between the first region and the second region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile