The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Jul. 06, 2022
Applicant:

Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Ngoc-Anh Nguyen, Grenoble Cedex, FR;

Sami Oukassi, Grenoble Cedex, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
G01N 27/414 (2013.01); H10D 30/031 (2025.01); H10D 30/6758 (2025.01);
Abstract

An electrolyte-based field effect transistor includes a dielectric layer; a source electrode and a drain electrode located on top of the dielectric layer; the electrolyte-based transistor further including an electrolyte layer between and on top of the source electrode and the drain electrode, the part of the electrolyte layer located between the source electrode and the drain electrode being in direct contact with the dielectric layer; and a gate electrode on top of the electrolyte layer, the orthogonal projection of the gate electrode in a plane including the source and drain electrodes being located, at least in part, between the source and the drain electrodes.


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