The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Mar. 09, 2023
Mahle International Gmbh, Stuttgart, DE;
Tihomir Angelov, Ludwigsburg, DE;
Marvin Derschka, Remseck am Neckar, DE;
Volker Kirschner, Muehlacker, DE;
Hans Christian Uibeleisen, Backnang, DE;
Mahle International GmbH, , DE;
Abstract
A method for determining a temperature of an Insulated-Gate Bipolar Transistor ('IGBT') driver, the IGBT driver may include two Metal-Oxide-Semiconductor Field-Effect Transistor (“MOSFET”) elements, two direct voltage terminals for providing a base direct voltage for the two MOSFET elements, two gate terminals for providing two control voltages for the two MOSFET elements, a measurement output for outputting an output voltage, and an alternating voltage source for providing an alternating voltage, the method may include providing the control voltages, the base direct voltage, and the alternating voltage, superimposing the alternating voltage with the base direct voltage, capturing the output voltage at the measurement output of the IGBT driver, and determining the temperature of the respective MOSFET elements from the captured output voltage.
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