The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Dec. 06, 2021
Robbie J. Jorgenson, Minneapolis, MN (US);
Robbie J. Jorgenson, Minneapolis, MN (US);
Abstract
A process for producing semiconductor structures comprising one of more layers of Group III/IV Compounds deposited onto a template using PVD sputtering the resulting semiconductor structures is provided according to the invention. The Group III or Group IV material may be gallium, hafnium, indium, aluminum, silicon, germanium, magnesium and/or zirconium. The anion provided by a reactive gas may be nitride, oxide, arsenide, or phosphide. The flow of the reactive gas to the vacuum chamber used to react with the sputtered Group III or Group IV target material for produce the Group III/IV Compound layer onto the template is modulated during a duty cycle during the PVD sputtering process between a target-rich condition and a reactive gas-rich condition to enhance the efficiency of the PVD sputtering process and improve the crystallinity of the Group III/IV Compound layer within the resulting semiconductor structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile