The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Sep. 04, 2023
Tcl Zhonghuan Renewable Energy Technology Co., Ltd., Tianjin, CN;
TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD., Tianjin, CN;
Abstract
The present application discloses a crystal rod manufacturing method and a crystal rod belonging to a field of monocrystal growth technologies. The crystal rod manufacturing method of the present application includes a shoulder rotation step and a diameter equalization step, wherein in the shoulder rotation step and/or the diameter equalization step, hydrogen-containing gas is inputted. The hydrogen-containing gas includes hydrogen gas, a mass of the hydrogen gas is m, a total mass of the hydrogen-containing gas is m, an inequation as follows is satisfied: m/m≤30%. The present application, by inputting the hydrogen gas during the process of manufacturing the crystal rods, can lower an oxygen content of monocrystals to reduce defects in the monocrystalline silicon, which can reduce formation of boron oxygen complexes and prevent a phenomenon of efficiency degradation when boron-doping monocrystals are pulled.