The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Nov. 10, 2022
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Scott Andrew Weaver, Ballston Lake, NY (US);

Joshua Roger Salisbury, Albany, NY (US);

Aida Amroussia, Paris, FR;

Jon Michael Wilcox, Watervliet, NY (US);

Patrick Taylor Shower, Nassau, NY (US);

Assignee:

GE Infrastructure Technology LLC, Greenville, SC (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/32 (2006.01); C23C 26/02 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 26/02 (2013.01); C23C 14/325 (2013.01); H01J 37/32055 (2013.01);
Abstract

A cathodic arc coating system includes alternating layers of at least one of titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN) disposed on a substrate; and alternating layers of titanium vanadium chromium nitride (TiVCrN) and titanium silicon vanadium nitride (TiSiVCrN) disposed on a substrate. A cathodic arc process includes a sub-hertz variable bias forming the alternating layers of alternating layers of at least one of titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN) disposed on a substrate; and alternating layers of titanium vanadium chromium nitride (TiVCrN) and titanium silicon vanadium nitride (TiSiVCrN) disposed on a substrate.


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