The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Nov. 11, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kevin Kashefi, Sam Ramon, CA (US);

Joel Minster Huston, Los Gatos, CA (US);

Michael Lee Mcswiney, Scappoose, OR (US);

Carmen Leal Cervantes, Mountain View, CA (US);

Yongjin Kim, Santa Clara, CA (US);

Drew William Phillips, San Jose, CA (US);

Mark Joseph Saly, Milpitas, CA (US);

Assignee:

Applied Materials Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/45512 (2013.01); C23C 16/45557 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/458 (2013.01);
Abstract

Methods and apparatus for self-assembled monolayer (SAM) deposition are provided herein. In some embodiments, an apparatus for self-assembled monolayer (SAM) deposition includes: a chamber enclosing a processing volume; a substrate support disposed in the chamber and configured to support a substrate in the processing volume; a gas distribution system coupled to the chamber and configured to distribute a process gas into the processing volume; a first SAM precursor source fluidly coupled to the gas distribution system to provide a first SAM precursor as a part of the process gas; and a second SAM precursor source fluidly coupled to the gas distribution system to provide a second SAM precursor, different than the first SAM precursor, as a part of the process gas, wherein the first and second SAM precursor sources are independently controllable to control a relative percentage of the first and second SAM precursors in the process gas with respect to each other.


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