The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Aug. 03, 2020
Applicant:
Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;
Inventors:
Jin-Seong Park, Seongnam-si, KR;
Ju-Hwan Han, Seoul, KR;
Seong-Hyeon Lee, Busan, KR;
Seok-Goo Jeong, Goyang-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H10K 59/80 (2023.01); H10K 77/10 (2023.01); H10K 71/00 (2023.01);
U.S. Cl.
CPC ...
C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/4408 (2013.01); C23C 16/45538 (2013.01); H10K 59/8731 (2023.02); H10K 77/111 (2023.02); H10K 71/00 (2023.02);
Abstract
A method for manufacturing a sealing structure may comprise the steps of: providing a substrate in a chamber; forming a first material layer containing a silicon nitride (SiNx) on the substrate; and forming a second material layer containing a silicon oxide (SiOx) on the first material layer, wherein the step of forming the first material layer and the step of forming the second material layer are performed by a plasma-enhanced atomic layer deposition (PEALD) method.