The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Apr. 01, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Saehan Park, Clifton Park, NY (US);
Seungyoung Lee, Clifton Park, NY (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49822 (2013.01); H01L 21/486 (2013.01); H01L 23/49838 (2013.01); H01L 23/5286 (2013.01);
Abstract
Provided is a backside power distribution network (BSPDN) semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device including an active device that includes an epitaxial layer, a second semiconductor device provided on a second surface of the wafer opposite to the first surface, the second semiconductor device including a power rail configured to supply power, and a through-silicon via (TSV) protruding from the power rail and extending to a level of the epitaxial layer of the active device.