The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Dec. 21, 2021
Texas Instruments Incorporated, Dallas, TX (US);
Elizabeth Costner Stewart, Dallas, TX (US);
Jeffrey Alan West, Dallas, TX (US);
Thomas Dyer Bonifield, Dallas, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An integrated circuit with a first conductive region, a second conductive region, a plurality of dielectric layers of a first material type between the first conductive region and the second conductive region, and at least one dielectric layer of a second material type, between a first dielectric layer in the plurality of dielectric layers of a first material type and a second dielectric layer in the plurality of dielectric layers of the first material type. Each dielectric layer of a first material type has a thickness in a range from 0.5 μm to 5.0 μm, and the at least one dielectric layer of a second material type is not contacting a metal and has a thickness less than 2.0 μm, and the second material type differs from the first material type in at least one of compression stress or elements in the first material type as compared to elements in the second material type.