The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Jan. 27, 2023
Applicant:

Screen Holdings Co., Ltd., Kyoto, JP;

Inventors:

Kazuki Nishihara, Kyoto, JP;

Yuya Akanishi, Kyoto, JP;

Masaki Inaba, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01L 21/67028 (2013.01); H01L 21/67253 (2013.01);
Abstract

An etching method according to the present invention includes after a step of creating a reduced pressure state, a step of supplying an etching gas containing hydrogen fluoride into a processing chamber and etching a coating film formed on a substrate, after the step of etching the coating film, a step of cleaning the substrate by supplying vapor into the processing chamber, and in the step of cleaning the substrate, a step of detecting Si—F stretching vibration in the substrate by infrared spectroscopy, in which the step of cleaning the substrate ends when the Si—F stretching vibration equal to or lower than a predetermined first threshold value is detected. Therefore, the time required for cleaning the substrate is prevented from being unnecessarily long.


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