The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jun. 23, 2023
The Boeing Company, Arlington, VA (US);
Shanying Cui, Calabasas, CA (US);
Samuel J. Whiteley, Venice, CA (US);
Jason A. Graetz, Calabasas, CA (US);
John J. Vajo, West Hills, CA (US);
Adam E. Sorensen, Moorpark, CA (US);
The Boeing Company, Arlington, VA (US);
Abstract
A method for producing a planar semiconductor surface includes forming a workpiece that has a carrier substrate, one or more insulating layers, a semiconductor layer, a first etch stop layer, and a second etch stop layer; forming a contact on the workpiece; biasing the workpiece to a second voltage through the contact; etching the second etch stop layer and part of the first etch stop layer with a photo-electrochemical etching and the second voltage that selectively removes the second etch stop layer faster than the first etch stop layer; biasing the workpiece to a first voltage through the contact; and etching the first etch stop layer and part of the semiconductor layer with the photo-electrochemical etching and the first voltage that selectively removes the first etch stop layer faster than the semiconductor layer to produce a semiconductor device with a planar surface on the semiconductor layer.